Influence of trap states on dynamic properties of single grain silicon thin film transistors
نویسندگان
چکیده
The transient properties of single grain–thin film transistors SG-TFTs with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device. © 2006 American Institute of Physics. DOI: 10.1063/1.2193049
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